Abstract
The binding energy of excitons and biexcitons and the exciton dephasing in T-shaped GaAs quantum wires is investigated by transient four-wave mixing. The T-shaped structure is fabricated by cleaved-edge overgrowth, and its geometry is engineered to optimize the one-dimensional confinement. In this wire of
6.6 × 24 nm2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of
6.1 ± 0.5 μeV/K is larger than in comparable quantum-well structures.
6.6 × 24 nm2 size, we find a one-dimensional confinement of more than 20 meV, an inhomogeneous broadening of 3.4 meV, an exciton binding energy of 12 meV, and a biexciton binding energy of 2.0 meV. A dispersion of the homogeneous linewidth within the inhomogeneous broadening due to phonon-assisted relaxation is observed. The exciton acoustic-phonon-scattering coefficient of
6.1 ± 0.5 μeV/K is larger than in comparable quantum-well structures.
| Original language | English |
|---|---|
| Pages (from-to) | 16667-16674 |
| Number of pages | 8 |
| Journal | Phys. Rev. B |
| Volume | 60 |
| Issue number | 24 |
| DOIs | |
| Publication status | Published - 1 Dec 1999 |