MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

C. B. Sørensen; H. Gislason; D. Birkedal; J. M. Hvam

doi:10.1016/0026-2692(95)00035-6

MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

C. B. Sørensen
, H. Gislason
, D. Birkedal
, J. M. Hvam

Náttúruvísindadeildin - Faculty of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si $-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. © 1995.

Original language	English
Pages (from-to)	767-773
Number of pages	7
Journal	Microelectronics Journal
Volume	26
Issue number	8
DOIs	https://doi.org/10.1016/0026-2692(95)00035-6
Publication status	Published - 1995

Access to Document

10.1016/0026-2692(95)00035-6

Cite this

@article{cf4ab9826ab44a0cbe54480c847d8887,

title = "MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs",

abstract = "An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si \$-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. {\textcopyright} 1995.",

author = "S{\o}rensen, \{C. B.\} and H. Gislason and D. Birkedal and Hvam, \{J. M.\}",

year = "1995",

doi = "10.1016/0026-2692(95)00035-6",

language = "English",

volume = "26",

pages = "767--773",

journal = "Microelectronics Journal",

issn = "1879-2391",

publisher = "Elsevier Ltd.",

number = "8",

}

TY - JOUR

T1 - MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

AU - Sørensen, C. B.

AU - Gislason, H.

AU - Birkedal, D.

AU - Hvam, J. M.

PY - 1995

Y1 - 1995

N2 - An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si $-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. © 1995.

AB - An improved quality of (110) GaAs has been grown by molecular beam epitaxy using As2 in lieu of As4. The most pronounced effect of using As2 is a higher doping efficiency of Si $-doped GaAs layers, resulting in a mobility of the (110) layers, comparable to the reference (100) samples. The high quality of the (110) GaAs was confirmed by low temperature photoluminescence. The spectrum of the GaAs layer shows a single dominant free exciton line with a linewidth of 1.0 meV. © 1995.

U2 - 10.1016/0026-2692(95)00035-6

DO - 10.1016/0026-2692(95)00035-6

M3 - Article

SN - 1879-2391

VL - 26

SP - 767

EP - 773

JO - Microelectronics Journal

JF - Microelectronics Journal

IS - 8

ER -

MBE growth and characterization of high purity GaAs/AIGaAs on the (110) surface of GaAs

Abstract

Access to Document

Fingerprint

Cite this