MBE Cleaved Edge Overgrowth of Quantum Wires

H. Gislason

doi:10.1007/978-1-4615-5835-4_34

MBE Cleaved Edge Overgrowth of Quantum Wires

H. Gislason

Náttúruvísindadeildin - Faculty of Science and Technology

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

Abstract

Cleaved edge overgrowth (CEO) is a molecular beam epitaxy (MBE) process which can produce laterally confined semiconductor nanostructures1. The basic idea of the CEO is to utilize the atomic layer precision of the MBE process to control the dimensions of a low-dimensional structure (dimensions < 10 nm!). First a multiple quantum well (MQW) structure is made by standard MBE growth on a (100) GaAs substrate. The (100) GaAs samples are then thinned to textasciitilde100--200 textmum thickness and cleaved in ultra high vacuum in the MBE machine. The cleave exposes an exact (110) surface of GaAs and the final step is a MBE overgrowth on the cleaved edge. High quality MBE growth on (110) GaAs is not trivial. We have made growth tests on (110) GaAs substrates which indicates that an improved quality (110) GaAs/AlGaAs is achieved using molecular beams of As2 instead of As4 in the MBE growth. We are currently interested in the concept of T-shaped quantum wires2--5. Photoluminescence characterization at 4 K of our first CEO sample with T-shaped intersections between 70 Å thick (100) MQW's and a 70 Å (110) single quantum well (SQW) indicates formation of quantum wires textasciitilde14 meV below the (100) MQW luminescence and textasciitilde7 meV below the (110) SQW luminescence.

Original language	English
Title of host publication	Spectroscopy and Dynamics of Collective Excitations in Solids
Subtitle of host publication	Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy
Editors	Baldassare Di Bartolo, Stamatios Kyrkos
Place of Publication	Boston, MA
Publisher	Springer US
Pages	609-609
Number of pages	1
ISBN (Print)	978-1-4615-5835-4
DOIs	https://doi.org/10.1007/978-1-4615-5835-4_34
Publication status	Published - 1997

Publication series

Name	NATO ASI Series B: Physics
Publisher	Plenum Publishing Corporation
Volume	356

Access to Document

10.1007/978-1-4615-5835-4_34

https://doi.org/10.1007/978-1-4615-5835-4_34

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Gislason, H. (1997). MBE Cleaved Edge Overgrowth of Quantum Wires. In B. Di Bartolo, & S. Kyrkos (Eds.), Spectroscopy and Dynamics of Collective Excitations in Solids: Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy (pp. 609-609). (NATO ASI Series B: Physics; Vol. 356). Springer US. https://doi.org/10.1007/978-1-4615-5835-4_34

Gislason, H. / MBE Cleaved Edge Overgrowth of Quantum Wires. Spectroscopy and Dynamics of Collective Excitations in Solids: Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy. editor / Baldassare Di Bartolo ; Stamatios Kyrkos. Boston, MA : Springer US, 1997. pp. 609-609 (NATO ASI Series B: Physics).

@inbook{0f4d71d02bde420aa4ce53ef80eebe4f,

title = "MBE Cleaved Edge Overgrowth of Quantum Wires",

abstract = "Cleaved edge overgrowth (CEO) is a molecular beam epitaxy (MBE) process which can produce laterally confined semiconductor nanostructures1. The basic idea of the CEO is to utilize the atomic layer precision of the MBE process to control the dimensions of a low-dimensional structure (dimensions < 10 nm!). First a multiple quantum well (MQW) structure is made by standard MBE growth on a (100) GaAs substrate. The (100) GaAs samples are then thinned to textasciitilde100--200 textmum thickness and cleaved in ultra high vacuum in the MBE machine. The cleave exposes an exact (110) surface of GaAs and the final step is a MBE overgrowth on the cleaved edge. High quality MBE growth on (110) GaAs is not trivial. We have made growth tests on (110) GaAs substrates which indicates that an improved quality (110) GaAs/AlGaAs is achieved using molecular beams of As2 instead of As4 in the MBE growth. We are currently interested in the concept of T-shaped quantum wires2--5. Photoluminescence characterization at 4 K of our first CEO sample with T-shaped intersections between 70 {\AA} thick (100) MQW's and a 70 {\AA} (110) single quantum well (SQW) indicates formation of quantum wires textasciitilde14 meV below the (100) MQW luminescence and textasciitilde7 meV below the (110) SQW luminescence.",

author = "H. Gislason",

year = "1997",

doi = "10.1007/978-1-4615-5835-4_34",

language = "English",

isbn = "978-1-4615-5835-4",

series = "NATO ASI Series B: Physics",

publisher = "Springer US",

pages = "609--609",

editor = "{Di Bartolo}, Baldassare and Stamatios Kyrkos",

booktitle = "Spectroscopy and Dynamics of Collective Excitations in Solids",

}

Gislason, H 1997, MBE Cleaved Edge Overgrowth of Quantum Wires. in B Di Bartolo & S Kyrkos (eds), Spectroscopy and Dynamics of Collective Excitations in Solids: Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy. NATO ASI Series B: Physics, vol. 356, Springer US, Boston, MA, pp. 609-609. https://doi.org/10.1007/978-1-4615-5835-4_34

MBE Cleaved Edge Overgrowth of Quantum Wires. / Gislason, H.
Spectroscopy and Dynamics of Collective Excitations in Solids: Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy. ed. / Baldassare Di Bartolo; Stamatios Kyrkos. Boston, MA: Springer US, 1997. p. 609-609 (NATO ASI Series B: Physics; Vol. 356).

Research output: Chapter in Book/Report/Conference proceeding › Chapter › peer-review

TY - CHAP

T1 - MBE Cleaved Edge Overgrowth of Quantum Wires

AU - Gislason, H.

PY - 1997

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N2 - Cleaved edge overgrowth (CEO) is a molecular beam epitaxy (MBE) process which can produce laterally confined semiconductor nanostructures1. The basic idea of the CEO is to utilize the atomic layer precision of the MBE process to control the dimensions of a low-dimensional structure (dimensions < 10 nm!). First a multiple quantum well (MQW) structure is made by standard MBE growth on a (100) GaAs substrate. The (100) GaAs samples are then thinned to textasciitilde100--200 textmum thickness and cleaved in ultra high vacuum in the MBE machine. The cleave exposes an exact (110) surface of GaAs and the final step is a MBE overgrowth on the cleaved edge. High quality MBE growth on (110) GaAs is not trivial. We have made growth tests on (110) GaAs substrates which indicates that an improved quality (110) GaAs/AlGaAs is achieved using molecular beams of As2 instead of As4 in the MBE growth. We are currently interested in the concept of T-shaped quantum wires2--5. Photoluminescence characterization at 4 K of our first CEO sample with T-shaped intersections between 70 Å thick (100) MQW's and a 70 Å (110) single quantum well (SQW) indicates formation of quantum wires textasciitilde14 meV below the (100) MQW luminescence and textasciitilde7 meV below the (110) SQW luminescence.

AB - Cleaved edge overgrowth (CEO) is a molecular beam epitaxy (MBE) process which can produce laterally confined semiconductor nanostructures1. The basic idea of the CEO is to utilize the atomic layer precision of the MBE process to control the dimensions of a low-dimensional structure (dimensions < 10 nm!). First a multiple quantum well (MQW) structure is made by standard MBE growth on a (100) GaAs substrate. The (100) GaAs samples are then thinned to textasciitilde100--200 textmum thickness and cleaved in ultra high vacuum in the MBE machine. The cleave exposes an exact (110) surface of GaAs and the final step is a MBE overgrowth on the cleaved edge. High quality MBE growth on (110) GaAs is not trivial. We have made growth tests on (110) GaAs substrates which indicates that an improved quality (110) GaAs/AlGaAs is achieved using molecular beams of As2 instead of As4 in the MBE growth. We are currently interested in the concept of T-shaped quantum wires2--5. Photoluminescence characterization at 4 K of our first CEO sample with T-shaped intersections between 70 Å thick (100) MQW's and a 70 Å (110) single quantum well (SQW) indicates formation of quantum wires textasciitilde14 meV below the (100) MQW luminescence and textasciitilde7 meV below the (110) SQW luminescence.

U2 - 10.1007/978-1-4615-5835-4_34

DO - 10.1007/978-1-4615-5835-4_34

M3 - Chapter

SN - 978-1-4615-5835-4

T3 - NATO ASI Series B: Physics

SP - 609

EP - 609

BT - Spectroscopy and Dynamics of Collective Excitations in Solids

A2 - Di Bartolo, Baldassare

A2 - Kyrkos, Stamatios

PB - Springer US

CY - Boston, MA

ER -

Gislason H. MBE Cleaved Edge Overgrowth of Quantum Wires. In Di Bartolo B, Kyrkos S, editors, Spectroscopy and Dynamics of Collective Excitations in Solids: Proceedings of a NATO Advanced Study Institute and International School of Atomic and Molecular Spectroscopy Workshop on Spectroscopy and Dynamics of Collective Excitation in Solids, held June 17-July 1, 1995, in Erice, Italy. Boston, MA: Springer US. 1997. p. 609-609. (NATO ASI Series B: Physics). doi: 10.1007/978-1-4615-5835-4_34

MBE Cleaved Edge Overgrowth of Quantum Wires

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