Highly confined T-shaped quantum wires

H. Gislason; W. Langbein; J.M. Hvam

doi:10.1006/spmi.1996.0253

Highly confined T-shaped quantum wires

H. Gislason, W. Langbein, J.M. Hvam

Náttúruvísindadeildin - Faculty of Science and Technology

Research output: Contribution to journal › Article › peer-review

4 Citations (Scopus)

Abstract

A systematic approach to enhance the one-dimensional confinement energy of AlxGa1-xAs/Al0.3Ga0.7As T-shaped quantum wires is demonstrated. The design of the sample structures is derived from a calculation of the confined T-wire states. The samples are grown by molecular beam epitaxy cleaved edge overgrowth. We present experimental results, which show a T-wire confinement energy of 54 meV for an optimized sample structure. The temperature dependence of the wire luminescence intensity and decay time is dominated by exciton scattering into the cleaved multiple quantum well structure, with an activation energy comparable to the wire confinement energy.

Original language	Undefined/Unknown
Pages (from-to)	217-220
Number of pages	4
Journal	Micro and Nanostructures
Volume	22
Issue number	2
DOIs	https://doi.org/10.1006/spmi.1996.0253
Publication status	Published - 1997

Keywords

T-shaped GaAs/AlGaAs quantum wires
confinement energy
one-dimensional states
MBE cleaved edge overgrowth

Access to Document

10.1006/spmi.1996.0253

https://www.sciencedirect.com/science/article/pii/S0749603696902530

Cite this

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title = "Highly confined T-shaped quantum wires",

abstract = "A systematic approach to enhance the one-dimensional confinement energy of AlxGa1-xAs/Al0.3Ga0.7As T-shaped quantum wires is demonstrated. The design of the sample structures is derived from a calculation of the confined T-wire states. The samples are grown by molecular beam epitaxy cleaved edge overgrowth. We present experimental results, which show a T-wire confinement energy of 54 meV for an optimized sample structure. The temperature dependence of the wire luminescence intensity and decay time is dominated by exciton scattering into the cleaved multiple quantum well structure, with an activation energy comparable to the wire confinement energy.",

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T1 - Highly confined T-shaped quantum wires

AU - Gislason, H.

AU - Langbein, W.

AU - Hvam, J.M.

PY - 1997

Y1 - 1997

N2 - A systematic approach to enhance the one-dimensional confinement energy of AlxGa1-xAs/Al0.3Ga0.7As T-shaped quantum wires is demonstrated. The design of the sample structures is derived from a calculation of the confined T-wire states. The samples are grown by molecular beam epitaxy cleaved edge overgrowth. We present experimental results, which show a T-wire confinement energy of 54 meV for an optimized sample structure. The temperature dependence of the wire luminescence intensity and decay time is dominated by exciton scattering into the cleaved multiple quantum well structure, with an activation energy comparable to the wire confinement energy.

AB - A systematic approach to enhance the one-dimensional confinement energy of AlxGa1-xAs/Al0.3Ga0.7As T-shaped quantum wires is demonstrated. The design of the sample structures is derived from a calculation of the confined T-wire states. The samples are grown by molecular beam epitaxy cleaved edge overgrowth. We present experimental results, which show a T-wire confinement energy of 54 meV for an optimized sample structure. The temperature dependence of the wire luminescence intensity and decay time is dominated by exciton scattering into the cleaved multiple quantum well structure, with an activation energy comparable to the wire confinement energy.

KW - T-shaped GaAs/AlGaAs quantum wires

KW - confinement energy

KW - one-dimensional states

KW - MBE cleaved edge overgrowth

U2 - 10.1006/spmi.1996.0253

DO - 10.1006/spmi.1996.0253

M3 - Article

SN - 1096-3677

VL - 22

SP - 217

EP - 220

JO - Micro and Nanostructures

JF - Micro and Nanostructures

IS - 2

ER -