(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires

H. Gislason; C. B. Sørensen; J. M. Hvam

doi:10.1063/1.117896

(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires

H. Gislason, C. B. Sørensen, J. M. Hvam

Náttúruvísindadeildin - Faculty of Science and Technology

Research output: Contribution to journal › Article › peer-review

15 Citations (Scopus)

Abstract

High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 Å wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Å is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers.

Original language	Undefined/Unknown
Pages (from-to)	800-802
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	6
DOIs	https://doi.org/10.1063/1.117896
Publication status	Published - 1996

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Cite this

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title = "(110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires",

abstract = "High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 {\AA} wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 {\AA} is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers.",

author = "H. Gislason and S{\o}rensen, {C. B.} and Hvam, {J. M.}",

year = "1996",

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journal = "Applied Physics Letters",

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T1 - (110) oriented GaAs/Al0.3Ga0.7As quantum wells for optimized T‐shaped quantum wires

AU - Gislason, H.

AU - Sørensen, C. B.

AU - Hvam, J. M.

PY - 1996

Y1 - 1996

N2 - High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 Å wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Å is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers.

AB - High control of (110) oriented GaAs/Al0.3Ga0.7As quantum wells is very important for the growth of optimized T‐shaped GaAs/AlGaAs quantum wires. We investigate theoretically and experimentally 20–200 Å wide (110) oriented GaAs quantum wells grown on (110) oriented substrates and cleaved edges. Photoluminescence transition energies are found to be in good agreement with theory for all well widths. The mean well width is controllable to 1 monolayer accuracy and an effective well width fluctuation of 3.7 Å is derived from the photoluminescence linewidths. The growth rate calibration of the aluminum content of the barrier material agrees within 1% with an estimate from the bound exciton emission of (110) Al0.3Ga0.7As epilayers.

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DO - 10.1063/1.117896

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EP - 802

JO - Applied Physics Letters

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